si2304 n-channel enhancement mode field effect transistor features ? 30v,2.5a, r ds(on) =65m @v gs =10v r ds(on) =90m @v gs =4.5v ? high dense cell design for extremely low r ds(on) ? rugged and reliable ? lead free product is acquired ? sot-23 package ? marking code: s4 maximum ratings @ 25 o c unless otherwise specified symbol parameter rating unit v ds drain-source voltage 30 i d drain current-continuous 2.5 i dm drain current-pulsed 10 v gs gate-source voltage p d total power dissipation 0.25 w r ja thermal resistance junction to ambient t j operating junction temperature -55 to +150 t stg storage temperature -55 to +150 internal block diagram micro commercial components m c c tm
omp onents 20736 marilla street chatsworth
revision: a 2011/01/01 www. mccsemi .com 1 of 5 sot-23 suggested solder pad layout dimensions inches mm dim min max min max note a .110 .120 2.80 3.04 b .083 .098 2.10 2.64 c .047 .055 1.20 1.40 d .035 .041 .89 1.03 e .070 .081 1.78 2.05 f .018 .024 .45 .60 g .0005 .0039 .013 .100 h .035 .044 .89 1.12 j .003 .007 .085 .180 k .015 .020 .37 .51 a b c d e f g h j .079 2.000 in c h es mm . 03 1 .800 .035 .900 .037 .950 .037 .950 k s g d 2 3 1 1.gate 2. source 3. drain 30v,2.0a, v a a v 20 /w 500 lead free finish/rohs compliant ("p" suffix designa tes rohs compliant. see ordering information) epoxy meets ul 94 v-0 flammability rating moisture sensitivity level 1
si230 4 micro commercial components m c c tm revision: a 2011/01/01 www. mccsemi .com 2 of 5 electrical characteristics t a = 25 c unless otherwise noted parameter symbol test condition min typ max units off characteristics drain-source breakdown voltage bv dss v gs = 0v, i d =250a 30 v zero gate voltage drain current i dss v ds =30v, v gs =1v 1 a gate body leakage current, forward i gssf v gs = 20v, v ds = 0v 100 na gate body leakage current, reverse i gssr v gs = -20v, v ds = 0v -100 na on characteristics gate threshold voltage v gs(th) v gs = v ds , i d =250a 1 3 v v gs =10v, i d =2.5a 65 m
static drain-source on-resistance r ds(on) v gs =4.5v, i d =2a 90 m
forward transconductance g fs v ds =4.5v, i d =2.5a 4.6 s dynamic characteristics input capacitance c iss 240 pf output capacitance c oss 110 pf reverse transfer capacitance c rss v ds =15v, v gs = 0v, f = 1.0 mhz 17 pf switching characteristics turn-on delay time t d(on) 8 20 ns turn-on rise time t r 12 30 ns turn-off delay time t d(off) 17 35 ns turn-off fall time t f v dd = 15v, i d =1a, v gen =10v, r g =6
, r l =15
8 20 ns total gate charge q g 4.5 10 nc gate-source charge q gs 0.8 nc gate-drain charge q gd v ds =15v, i d =2.5a, v gs =10v 1.0 nc drain-source diode characteristics and maximun ratings drain-source diode forward voltage v sd v gs = 0v, i s =1.25a 1.2 v
micro commercial components m c c tm revision: a 2011/01/01 www. mccsemi .com 3 of 5 si230 4
si230 4 micro commercial components m c c tm revision: a 2011/01/01 www. mccsemi .com 4 of 5
m c c revision: a 2011/01/01 tm micro commercial components www. mccsemi .com 5 of 5 3 device packing part number-tp tape&reel: 3kpcs/reel ordering information : *** i m p o r t a n t n o t ic e * ** m i c r o c o m m e r c i a l c o m p on e n ts c o r p . r e s e rve s t h e r i g h t t o m a k e c h a n g e s w i t ho u t f u r t h e r no t i c e t o a n y p r o d u c t h e r e i n t o m a k e c o rr e c t i o n s , m o d i f i c a t i o n s , e n h a n c e m e n t s , i m pr o v e m e n t s , o r o t h e r ch a n g e s . m i c r o c o m m e r c i a l c o mp o n e n ts c o r p . d o e s n o t a s s u m e a n y l i a b i l i t y a r i s i n g ou t o f t h e a p p l i c a t i on o r u s e o f a n y p r o d uc t d e sc r i be d h e r e i n ; n e i t h e r d o e s i t c o n v e y a n y li c e n s e un der i t s p a t e n t r i g h t s , n o r t h e r i g h t s o f o t h e r s . t h e u s e r o f pr o d uc t s i n s u c h a p p l i c a t i o n s sh a l l a ss u m e a l l r i s k s o f su c h u s e a n d w ill a g r ee t o h o l d m i c r o c o mm er c i a l c o m p o n e n t s c o r p . a n d a ll t h e c o m p a n i e s w ho s e p r o d u c t s a r e r e p r e s e n t ed o n ou r w e b s i t e , h a r m l e s s a g a i n s t a l l d a m a g e s. * * * l i f e s u p p o r t *** m c c ' s pr o d uc t s a r e n o t a u t h o r iz ed f o r u s e a s c r i t i c a l c o m p o n e n t s i n l i f e s u pp o r t d e v i c e s o r s y s t e m s w i t h ou t t h e e x pre ss wr i tt e n a p p r o v a l o f m i c r o c o mm e r c i a l c o m p o n e n t s c o rp o r a t i o n. * * * c u s t o m e r a w a r e n e ss*** c o un t e r f e i t i n g o f s e m i c o n d u c t o r p a r t s i s a gr o w i n g p r o b l e m i n t h e i n d u s t ry . m i c r o c o mm e r c i a l c o m p o n e n t s ( m cc ) i s t a k i n g s t r o n g m e a su r e s t o p r o t e c t ou r s e l v e s a n d o u r cu s t o m e r s f r o m t h e pr o l i f e r a t i on o f c o u n t e r f e i t p a r t s . m c c s t r o n g l y e nc o u r a g e s c u s t o m e r s t o p u r c h a s e m c c p a r t s e i t h e r d i r e c t l y f r o m m c c o r f r o m a u t ho r i z e d m c c d i s t r i b u t o r s w ho a r e l i s t e d b y c o u n t r y o n o u r w e b p a g e c i t ed below . p r o d uc t s c us t o m e r s b u y e i t h e r f r o m m c c d i r e c t l y o r f r o m a u t ho r i z e d m cc d i s t r i b u t o r s a r e g e n u i n e p a r t s , h a v e f ul l t r a c e a b il i t y , m e e t m c c ' s q u a l i t y s t a n d a r d s f o r h a n d li n g a n d s t o r a g e . m c c wi l l n o t p r o v i d e a n y w a rr a n ty c o v e r a g e o r o t h e r a s s i s t a n c e f o r p a r ts b o u g h t f r o m u n a u t h o r i z e d s o u r c e s. m c c i s c o m m i t t e d t o c o m b a t t h i s g l o b a l pr o b l e m a n d e n c ou r a g e o u r c u s t o m e r s t o d o t h e i r p a r t in s t o p p i n g t h i s p r a c t i c e b y b u y i n g d i r e c t o r f r o m a u t h o r i z ed d i s t r i b u t o r s.
|
